Hafnium Oxide on Silicon: A Non-Destructive Characterization of the Interfacial Layer |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
653-658 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.653 |
| Citation |
Dirk Wolfframm et al., 2003, Solid State Phenomena, 95-96, 653 |
| Authors |
Dirk Wolfframm, Simona Kouteva-Arguirova, Tzanimir Arguirov, R.P. Schmid, K. Dittmar, I Zienert, Jürgen Reif |
| Keywords |
Annealing, HfSiON, High-k Dielectrics, Interface Characteristics, MOCVD, Nitrogen |
| Full Paper |
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