Prospects for New Wafer Types and Materials in Semiconductor Technology and Factors for their Successful Introduction |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
665-0 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.665 |
| Citation |
Werner Bergholz et al., 2003, Solid State Phenomena, 95-96, 665 |
| Authors |
Werner Bergholz, Jürgen Wittmann, Rainer Winkler, Helmut Tews, Roger Fehlhaber |
| Keywords |
Compound Semiconductor, Cost, Customer Value, Design Rule, Flatness, Gate Leakage, Gate Oxide Leakage, III-V Compound Semiconductors, Si Wafer, Silicon Carbide (SiC), Standardisation |
| Full Paper |
Get the full paper by clicking here
|
