Paper Title:
Optimized Parameters for Modeling Oxygen Nucleation in Silicon
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 95-96)
Edited by
H. Richter and M. Kittler
Pages
71-76
DOI
10.4028/www.scientific.net/SSP.95-96.71
Citation
M. Zschorsch, R. Hölzl, H. Rüfer, H. J. Möller, W. von Ammon, "Optimized Parameters for Modeling Oxygen Nucleation in Silicon", Solid State Phenomena, Vols. 95-96, pp. 71-76, 2004
Online since
September 2003
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: G. Kissinger, J. Dabrowski, Andreas Sattler, Timo Müller, Wilfried von Ammon
Abstract:The coherent agglomeration of interstitial oxygen into single-plane and double-plane plates can explain the two peaks in the M-shaped...
293
Authors: Vasilii Gusakov
V. Light impurities in silicon-based materials
Abstract:In the framework of a unified approach the diffusion coefficient (the prefactor and activation barrier) of an interstitial oxygen...
171