Optimized Parameters for Modeling Oxygen Nucleation in Silicon |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
71-76 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.71 |
| Citation |
Markus Zschorsch et al., 2003, Solid State Phenomena, 95-96, 71 |
| Authors |
Markus Zschorsch, Robert Hölzl, Herbert Rüfer, Hans Joachim Möller, Wilfried von Ammon |
| Keywords |
Computer Modeling, Gettering, Nucleation, Oxygen Precipitation, Silicon, Taguchi |
| Full Paper |
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