Optimized Parameters for Modeling Oxygen Nucleation in Silicon |
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| Journal | Solid State Phenomena (Volumes 95 - 96) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by | H. Richter and M. Kittler |
| Pages | 71-76 |
| DOI | 10.4028/www.scientific.net/SSP.95-96.71 |
| Authors | Markus Zschorsch, Robert Hölzl, Herbert Rüfer, Hans Joachim Möller, Wilfried von Ammon |
| Keywords | Computer Modeling, Gettering, Nucleation, Oxygen Precipitation, Silicon, Taguchi |
| Full Paper | 
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