Oxygen Ion Bombardment for Local Oxide Formation in Si |
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| Journal | Solid State Phenomena (Volumes 95 - 96) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by | H. Richter and M. Kittler |
| Pages | 77-82 |
| DOI | 10.4028/www.scientific.net/SSP.95-96.77 |
| Citation | D. Krüger et al., 2003, Solid State Phenomena, 95-96, 77 |
| Authors | D. Krüger, R. Kurps, Peter Formanek, G. Weidner |
| Keywords | Defect, Implantation, Oxide Formation, Oxygen, SIMS, TEM |
| Full Paper | 
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