Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics |
| Journal |
Solid State Phenomena (Volumes 95 - 96) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology X |
| Edited by |
H. Richter and M. Kittler |
| Pages |
99-104 |
| DOI |
10.4028/www.scientific.net/SSP.95-96.99 |
| Citation |
F. Sahtout Karoui et al., 2003, Solid State Phenomena, 95-96, 99 |
| Authors |
F. Sahtout Karoui, A. Karoui, George A. Rozgonyi, M. Hourai, Koji Sueoka |
| Keywords |
Ab Initio, Atomic Structure, Barrier, CZ Si, Density Functional Theory (DFT), Formation Energy, FZ Si, Molecular Mechanics, N2, Nitrogen Doped Silicon, NO Complex, Potential Well, Stability, V2N2, VN2, V-N-O |
| Full Paper |
Get the full paper by clicking here
|
