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Gettering and Defect Engineering in Semiconductor Technology X

Solid State Phenomena Volumes 95 - 96

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• p325 Doping Effect of Helium Induced Nanocavities in Silicon   [ 98 K ]
  Authors: Frédéric Cayrel, Laurent Ventura, Daniel Alquier, Fabrice Roqueta, Robert Jérisian
• p331 LACBED Investigations of High Energy Helium Implanted into 4H-SiC   [ 1 M ]
  Authors: Marie France Beaufort, F. Pailloux, Jean François Barbot
• p337 Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon   [ 4 M ]
  Authors: C.L. Liu, Daniel Alquier, Frédéric Cayrel, E. Ntsoenzok, M.O. Ruault
• p343 Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon   [ 820 K ]
  Authors: Jadwiga Bak-Misiuk, Andrzej Misiuk, Artem Shalimov, Jacek Ratajczak, Barbara Surma, G. Gawlik
• p351 Two Dimensional Interstitial Diffusion in Mesoscopic Structures   [ 729 K ]
  Authors: Filippo Giannazzo, Vito Raineri, S. Mirabella, D. De Salvador, E. Napolitani, F. Priolo
• p361 Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon   [ 73 K ]
  Authors: Wilfried Vervisch, Laurent Ventura, Bernard Pichaud, Gérard Ducreux, Frédéric Lanois, André Lhorte
• p367 A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon   [ 95 K ]
  Authors: Eddy Simoen, C. Claeys, V.B. Neimash, A. Kraitchinskii, M. Kras'ko, V. Tischenko, V. Voitovych
• p373 Influence of Cobalt Contamination in the Measurement of Diffusion Length of Silicon Wafers   [ 167 K ]
  Authors: Nicolas Pic, Adrien Danel, Maria Luisa Polignano, Gianluca Salvà, Massimo Sardo, Stéphane Rey
• p381 High Temperature Electron Irradiation Effects in InGaAs Photodiodes   [ 71 K ]
  Authors: H. Ohyama, K. Takakura, K. Hayama, Toshio Hirao, Shinobu Onoda, Eddy Simoen, C. Claeys
• p387 Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range   [ 70 K ]
  Authors: Pavel Hazdra, Volodymyr V. Komarnitskyy
• p393 Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium   [ 116 K ]
  Authors: Lyudmila I. Khirunenko, O.A. Kobzar, Yu.V. Pomozov, Mikhail G. Sosnin, N.A. Tripachko, Nikolay V. Abrosimov, H. Riemann
• p399 Radiation Hardening of Silicon for Detectors by Preliminary Irradiation   [ 350 K ]
  Authors: P.G. Litovchenko, D. Bisello, A. Candelori, A.P. Litovchenko, A.A. Groza, A.P. Dolgolenko, V.I. Khivrich, L.I. Barabash, V.F. Lastovetsky, L.A. Polivtsev, W. Wahl, J. Wyss
• p405 Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen   [ 104 K ]
  Authors: A.A. Efremov, V.G. Litovchenko, A.V. Sarikov, Hans Richter, V.D. Akhmetov
• p415 First Principles Simulations of Extended Defects at Cubic SiC Surfaces and Interfaces   [ 36 K ]
  Authors: A. Catellani, G. Cicero, Giorgio Galli, Laurent Pizzagalli
• p423 Dislocation-Impurity Interaction in Silicon   [ 455 K ]
  Authors: Ichiro Yonenaga