Gettering and Defect Engineering in Semiconductor Technology X
| Paper Title | Page |
|---|---|
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Luminescence of Silicon Implanted with Phosphorus Authors: Tzanimir Arguirov, Martin Kittler, Winfried Seifert, D. Bolze, K.-E. Ehwald, Peter Formanek, Jürgen Reif |
289 |
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Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices Authors: Frédéric Cayrel, Daniel Alquier, Laurent Ventura, Leo Vincent, F. Roqueta, Christiane Dubois, Robert Jérisian |
297 |
|
Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment Authors: C.L. Liu, E. Ntsoenzok, Marie France Barthe, P. Desgardin, S. Ashok, A. Vengurlekar, Daniel Alquier, M.O. Ruault |
307 |
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Authors: Andrzej Misiuk, Adam Barcz, Jacek Ratajczak, Jadwiga Bak-Misiuk |
313 |
|
Defects Created by Multi-Energy He Implantation of Silicon at High Temperatures Authors: Marie-Laure David, Marie France Beaufort, Jean François Barbot |
319 |
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Doping Effect of Helium Induced Nanocavities in Silicon Authors: Frédéric Cayrel, Laurent Ventura, Daniel Alquier, Fabrice Roqueta, Robert Jérisian |
325 |
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LACBED Investigations of High Energy Helium Implanted into 4H-SiC Authors: Marie France Beaufort, F. Pailloux, Jean François Barbot |
331 |
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Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon Authors: C.L. Liu, Daniel Alquier, Frédéric Cayrel, E. Ntsoenzok, M.O. Ruault |
337 |
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Authors: Jadwiga Bak-Misiuk, Andrzej Misiuk, Artem Shalimov, Jacek Ratajczak, Barbara Surma, G. Gawlik |
343 |
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Two Dimensional Interstitial Diffusion in Mesoscopic Structures Authors: Filippo Giannazzo, Vito Raineri, S. Mirabella, D. De Salvador, E. Napolitani, F. Priolo |
351 |
