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Gettering and Defect Engineering in Semiconductor Technology X

Solid State Phenomena Volumes 95 - 96

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• p539 Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities   [ 596 K ]
  Authors: Mohammad B. Shabani, Y. Shiina, Y. Shimanuki
• p547 Gettering Strategies for SOI Wafers   [ 322 K ]
  Authors: Andrei A. Istratov, W. Huber, Eicke R. Weber
• p553 Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon   [ 494 K ]
  Authors: Andreas Sattler, Michael Seibt, Vitaly V. Kveder, Wolfgang Schröter
• p559 Controlled Gettering of Implanted Platinum in Silicon Produced by Helium Co-Implantation   [ 84 K ]
  Authors: Pavel Hazdra, Jan Vobecký
• p565 Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon   [ 64 K ]
  Authors: I.V. Antonova, Andrzej Misiuk, Adam Barcz, Di Sheng Yang, V.P. Popov
• p571 Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing   [ 825 K ]
  Authors: A.V. Frantskevich, Anis M. Saad, A.V. Mazanik, A.K. Fedotov, E.I. Rau, S.V. Chigir
• p577 Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon   [ 31 K ]
  Authors: Peng Zhang, Andrei A. Istratov, Hele Väinölä, Eicke R. Weber
• p581 Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency   [ 87 K ]
  Authors: Hele Väinölä, Peng Zhang, Antti Haarahiltunen, Andrei A. Istratov, Eicke R. Weber
• p587 Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering   [ 525 K ]
  Authors: Reinhard Kögler, A. Peeva, An. Kuznetsov, J.S. Christensen, Bengt G. Svensson, Wolfgang Skorupa
• p593 Internal Gettering Efficiency in p/p⁺ and p/p^- Silicon Epistructures   [ 620 K ]
  Authors: C. Frigeri, G. Borionetti, P. Godio, E. Gombia
• p599 Dopant Segregation on Cavities Induced by Helium Implantation: Impact of the Doping Level   [ 504 K ]
  Authors: Frédéric Cayrel, Leo Vincent, Daniel Alquier, Fuccio Cristiano, L. Ventura, Christiane Dubois, A. Claverie
• p607 Atomically Controlled Technology for Future Si-Based Devices   [ 1 M ]
  Authors: Junichi Murota, Masao Sakuraba, Bernd Tillack
• p617 Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon   [ 750 K ]
  Authors: Yue Long Huang, Michael Seibt, Wolfgang Schröter
• p623 Application-Specific Wafer Reclaim   [ 106 K ]
  Authors: Hans-Martin Dudenhausen, Mike Fritzsche, Christiane Streit, Christian Reuss
• p629 Coulomb Blockade in Silicon Nanocrystals Embedded in SiO₂ Matrix   [ 233 K ]
  Authors: M.D. Efremov, G.N. Kamaev, G.A. Kachurin, A.V. Kretinin, Vladimir A. Volodin, D.V. Marin, Sofia A. Arzhannikova, V.V. Malutina-Bronskaya, S.G. Yanovskaya