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Formation and Characteristics of Thin Films of ZrO2-8 mol % Y2O3 Solid Electrolytes

Journal Solid State Phenomena (Volumes 97 - 98)
Volume Self-Formation Theory and Applications
Edited by Stepas Janušonis
Pages 153-158
DOI 10.4028/www.scientific.net/SSP.97-98.153
Citation Darius Milčius et al., 2004, Solid State Phenomena, 97-98, 153
Authors Darius Milčius, L.L. Pranevičius, V. Širvinskaitė, T. Šalkus, A. Kežionis, A.F. Orliukas
Keywords Ionic Conductivity, Pulsed DC Magnetron Sputtering, Solid Electrolyte, Thin Film
Abstract

Thin films of ZrO2-8mol%Y2O3 have been deposed by pulsed DC magnetron sputtering method. The substrates of Ni-cermet and alloy-600 for the films were used. The results of the investigation of the X-ray diffraction patterns and SEM showed that the films are nanocrystalline and belong to cubic symmetry. The relaxation process is related to the ion transport in thin films. The results of the investigation of the temperature dependencies of thin films ionic conductivity (σ) showed that the dependence σ(T) is caused by the temperature dependence of oxygen vacancy mobility, while the number of charge carriers remains constant with temperature.

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