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Behavior of Hydrogen in Al, Mg and MgAl Plasma Saturated Films

Journal Solid State Phenomena (Volumes 97 - 98)
Volume Self-Formation Theory and Applications
Edited by Stepas Janušonis
Pages 159-164
DOI 10.4028/www.scientific.net/SSP.97-98.159
Citation Darius Milčius et al., 2004, Solid State Phenomena, 97-98, 159
Authors Darius Milčius, L.L. Pranevičius, Jurgita Nomgaudytė, Irmantas Barnackas
Keywords Hydrogen Storage, Thin Film, Vapor Deposition, X-Ray Diffraction (XRD)
Abstract

The behaviors of hydrogen in Al, Mg and MgAl thin films on stainless steel substrate were investigated in this work. The hydrogen ions extracted from plasma were used to load hydrogen into the film material. Glow discharge optical emission spectroscopy (GDOES) was applied to obtain the hydrogen depth profiles in Al films versus hydriding parameters. The MgH2, AlH3 and Mg(AlH4)2 hydrides were identified in plasma hydrided films using X-ray diffraction (XRD). It is shown that efficient supply transport of hydrogen from the surface into the bulk for Mg films takes place at temperature above 100 C and ion irradiation intensity above 1 mAcm-2.

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