Paper Title:
Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation
  Abstract

A microscopic mechanism of the self-formation of a dense pore system in the porous silicon is proposed. According to it, the process of porous silicon self-formation is dictated by the laws of dynamics for a charge carriers system. The proposed mechanism is proved by the results of computer simulation. The values of inter-pore separation distance in p-type based porous material and anodization current threshold density are evaluated; the dependence of an inter-pore separation distance on the carriers concentration, close to n-1/2, is predicted.

  Info
Periodical
Solid State Phenomena (Volumes 97-98)
Edited by
Stepas Janušonis
Pages
181-184
DOI
10.4028/www.scientific.net/SSP.97-98.181
Citation
M.E. Kompan, A.E. Gorodetski, I.L. Tarasova, "Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation", Solid State Phenomena, Vols. 97-98, pp. 181-184, 2004
Online since
April 2004
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Price
$32.00
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