Self Formation of Porous Silicon Structure: Primary Microscopic Mechanism of Pore Separation |
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| Journal | Solid State Phenomena (Volumes 97 - 98) |
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| Volume | Self-Formation Theory and Applications |
| Edited by | Stepas JanuĊĦonis |
| Pages | 181-184 |
| DOI | 10.4028/www.scientific.net/SSP.97-98.181 |
| Citation | M.E. Kompan et al., 2004, Solid State Phenomena, 97-98, 181 |
| Authors | M.E. Kompan, A.E. Gorodetski, I.L. Tarasova |
| Keywords | Charge Carriers, Electrochemistry, Porous Silicon (PS), Spatial Scaling |
| Abstract | A microscopic mechanism of the self-formation of a dense pore system in the porous silicon is proposed. According to it, the process of porous silicon self-formation is dictated by the laws of dynamics for a charge carriers system. The proposed mechanism is proved by the results of computer simulation. The values of inter-pore separation distance in p-type based porous material and anodization current threshold density are evaluated; the dependence of an inter-pore separation distance on the carriers concentration, close to n-1/2, is predicted. |
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