Paper Title:
Modelling Evolution of Nanostructures in Lateral Etching Processes
  Abstract

The model of the evolution of nano- and microstructures in the self-formation process of underetching (lateral etching) layers was created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The program was realized on the basis of a personal computer with the processor INTEL PENTIUM 4 and MATLAB 5.3 software. The results of the simulation were given for the different initial configurations of nanostructures. The experimental investigations evolution of microstructures in lateral etching processes of amorphous and polycrystalline films were performed and the results presented.

  Info
Periodical
Solid State Phenomena (Volumes 97-98)
Edited by
Stepas Janušonis
Pages
215-220
DOI
10.4028/www.scientific.net/SSP.97-98.215
Citation
R. Navickas, M. Romanov, "Modelling Evolution of Nanostructures in Lateral Etching Processes", Solid State Phenomena, Vols. 97-98, pp. 215-220, 2004
Online since
April 2004
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Price
$32.00
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