Paper Title:
Modelling Geometry of Technological Masks in Lateral Etching Processes
  Abstract

A model of the evolution geometry technological masks and underlaying layers in the lateral etching processes is created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The results of the simulation for the different configurations masks and selectivities of the underlaying layers have been presented.

  Info
Periodical
Solid State Phenomena (Volumes 97-98)
Edited by
Stepas Janušonis
Pages
235-238
DOI
10.4028/www.scientific.net/SSP.97-98.235
Citation
R. Navickas, R. Ciulada, "Modelling Geometry of Technological Masks in Lateral Etching Processes", Solid State Phenomena, Vols. 97-98, pp. 235-238, 2004
Online since
April 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: X.M.H. Huang, X.L. Feng, M.K. Prakash, S. Kumar, Christian A. Zorman, Mehran Mehregany, M.L. Roukes
1531
Authors: K. Dynefors, V. Desmaris, Joakim Eriksson, Per Åke Nilsson, Niklas Rorsman, Herbert Zirath
1125
Authors: Florentina Niebelschütz, Thomas Stauden, Katja Tonisch, Jörg Pezoldt
Abstract:In order to realize complex three dimensional or free standing structures on SiC substrates, an undercut, i.e. a selective isotropic etching...
849
Authors: Jia Qiang Du, Huan Liu, Wei Guo Liu
Chapter 1: Nanomaterials and Nanotechnology
Abstract:In the process of deep etching of silicon, the metal film or the oxide film served as silicon protective layer needed to be etched before...
117
Authors: Yang Gao, Yi He, Bin Zhou, Wan Jing He
Chapter 1: Material Science and Material Processing
Abstract:Sacrificial layer release is the key process step of cavity structure formation of Film Bulk Acoustic Resonator (FBAR), the degree of...
157