Paper Title:
Semiconducting Nanowires: Properties and Architectures
  Abstract

The paper describes the use of an in-situ microscopy technique, which combines transmission electron microscopy (TEM) with scanning probe microscopy (SPM), to investigate the electrical and mechanical properties of individual silicon and germanium nanowires. Additionally, the formation of ordered arrays of size-monodisperse silicon and germanium nanowires within mesoporous silica powders and thin films using a supercritical fluid inclusion phase technique is described. In particular, we demonstrate ultra high-density arrays of germanium nanowires, up to 2 x 1012 wires per square centimetre. These matric embedded nano-composite materials display unique optical properties such as intense room temperature ultraviolet and visible photoluminescence.

  Info
Periodical
Solid State Phenomena (Volumes 99-100)
Edited by
Witold Lojkowski and John R. Blizzard
Pages
109-116
DOI
10.4028/www.scientific.net/SSP.99-100.109
Citation
D. Erts, B. Polyakov, E. Saks, H. Olin, L. Ryen, K. Ziegler, J.D. Holmes, "Semiconducting Nanowires: Properties and Architectures", Solid State Phenomena, Vols. 99-100, pp. 109-116, 2004
Online since
July 2004
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$32.00
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