Paper Title:
Microstructure and Electrical Properties of Doped ZnO Varistor Nanomaterials
  Abstract

A sol-gel method of preparation doped ZnO varistor nanomaterials is described, The influences of doped ZnO nanomaterials for varistor microstructure and electrical properties (nonlinear coefficient α, breakdown voltage V1mA , dielectric constant ε, and dielectric loss tan δ) are investigated. Compared with the conventional mixed oxide technique, varistor ceramic of prepared by nanometer materials showed a more homogeneous microstructure, smaller grain sizes, higher densities and excellent electrical properties.

  Info
Periodical
Solid State Phenomena (Volumes 99-100)
Edited by
Witold Lojkowski and John R. Blizzard
Pages
127-132
DOI
10.4028/www.scientific.net/SSP.99-100.127
Citation
X. Kang, T. Minjing, M. Zhang, W. Tiandiao, "Microstructure and Electrical Properties of Doped ZnO Varistor Nanomaterials", Solid State Phenomena, Vols. 99-100, pp. 127-132, 2004
Online since
July 2004
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$32.00
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