Paper Title:
Ion Implanted Nanolayers in AlN for Direct Bonding with Copper
  Abstract

Experiments to directly bond AlN with Cu were conducted for different pre-treatments of the bonded components. AlN substrates were implanted either with oxygen, or titanium or iron ions at low (15 keV) or high (70 keV) energy, or thermally oxidized. Some Ti-implanted samples were also thermally oxidized. The copper component was annealed and thermally oxidized. The best results, with respect to the bond shear strength, were obtained for low-energy implantation of oxygen and titanium.

  Info
Periodical
Solid State Phenomena (Volumes 99-100)
Edited by
Witold Lojkowski and John R. Blizzard
Pages
231-234
DOI
10.4028/www.scientific.net/SSP.99-100.231
Citation
J. Piekoszewski, W. Olesińska, J. Jagielski, D. Kaliński, M. Chmielewski, Z. Werner, M. Barlak, W. Szymczyk, "Ion Implanted Nanolayers in AlN for Direct Bonding with Copper", Solid State Phenomena, Vols. 99-100, pp. 231-234, 2004
Online since
July 2004
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Price
$32.00
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