Paper Title:
CdS-PbS Multilayer Thin Films Grown by the SILAR Method
  Abstract

The successive ionic layer adsorption and reaction (SILAR) technique was used to grow double layer structures of CdS-PbS. The growth of thin films by the SILAR technique from diluted aqueous solutions was achieved, ionic layer by ionic layer, at room temperature and normal pressure. The thin films on silicon were characterized by XRD, AFM, XPS. It was established that a double layer could be grown on crystalline silicon and that the morphology and crystallinity of the films could be controlled by changing the lead precursor.

  Info
Periodical
Solid State Phenomena (Volumes 99-100)
Edited by
Witold Lojkowski and John R. Blizzard
Pages
243-246
DOI
10.4028/www.scientific.net/SSP.99-100.243
Citation
S. Lindroos, J. Puišo, S. Tamulevičius, M. Leskelä, "CdS-PbS Multilayer Thin Films Grown by the SILAR Method", Solid State Phenomena, Vols. 99-100, pp. 243-246, 2004
Online since
July 2004
Keywords
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