Paper Title:
Intersublevel Relaxation Dependence of Carrier Hopping in Self-Organized InAs Quantum Dot Heterostructures
  Abstract

The temperature dependence of the photoluminescence (PL) emission spectra of self-organized InAs/GaAs quantum dots (QDs) grown under different growth conditions in the range 20-300K has been investigated. Three InAs QD samples were grown on (100) 2º-tilted toward (111)A Si-doped GaAs substrates by metal-organic chemical vapour epitaxy (MOVPE), with various size uniformities and dot densities. Observing the measured PL spectra at 20K, the differences caused by size uniformities among the three samples were obvious. The PL spectra were simulated with rate equations, taking into account the carrier relaxation between the first excited state and the ground state. Interestingly, the calculated relaxation lifetimes at 20K were 198ps, 139ps and 54ps for the samples. The temperature dependent PL spectra were also simulated using the same model. Based on the calculated values of temperature dependent relaxation lifetimes, the differences in changes with temperature among the three samples are discussed. The results are consistent with the thermal redistribution effect.

  Info
Periodical
Solid State Phenomena (Volumes 99-100)
Edited by
Witold Lojkowski and John R. Blizzard
Pages
41-48
DOI
10.4028/www.scientific.net/SSP.99-100.41
Citation
Y.F. Wu, H.T. Shen, Y.H. Lin, C.C. Cheng, R.M. Lin, T. E. Nee, N.T. Yeh, "Intersublevel Relaxation Dependence of Carrier Hopping in Self-Organized InAs Quantum Dot Heterostructures", Solid State Phenomena, Vols. 99-100, pp. 41-48, 2004
Online since
July 2004
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: N. Žurauskienė, S. Ašmontas, A. Dargys, J. Kundrotas, G. Janssen, E. Goovaerts, Stanislovas Marcinkevičius, Paul M. Koenraad, J.H. Wolter, R.P. Leon
Abstract:We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy...
99
Authors: W. Lei, Y.H. Chen, Y.L. Wang, X.L. Ye, P. Jin, Bo Xu, Yi Ping Zeng, Z.G. Wang
Abstract:InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements...
1897
Authors: Ling Min Kong, Cun Xi Zhang, Rui Wang, Shi Lai Wang
Abstract:Self –organized InAs quantum wires (QWRs) were fabricated on the step edges of GaAs (331)A surface by molecular beam epitaxy (MBE). The...
1707
Authors: Jian Ming Yao, Ling Min Kong, Shi Lai Wang
Abstract:The influences of a thin InGaAs layer grown on GaAs(100) substrate before deposited InAs self-assembled quantum dots(SAQDs) were...
897
Authors: Peng Tian, Chong Qing Huang, Wen Hua Luo, Jing Liu
Chapter 2: Opto-Electronics Engineering
Abstract:InAs/GaAs quantum dots structures are grown by meta-organic chemical vapor deposition. The effects of growth temperatures on the structural...
265