Papers by keyword «Silicon» and «Defect»
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Direct Evidence of Fluorine-Related Defects in F+, BF+ and BF2+ Implanted Silicon by Positron Annihilation
Authors: L. Liszkay, E. Kótai, Zs. Kajcsos, T. Laine
Keywords: Defect, Fluorine, Ion Implantation, Positron Beams, Semiconductors, Silicon, Vacancy
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Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C
Authors: J. Lennart Lindström, T. Hallberg, P. Liberski, B.G. Svensson, L.I. Murin, V.P. Markevich
Keywords: Defect, Electron Irradiation, Oxygen Dimer, Silicon, Thermal Donor
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Self-Interstitials in Irradiated Silicon
Authors: B.N. Mukashev, H.P. Zeindl, Yu.V. Gorelkinskii
Keywords: Athermal Diffusion, Defect, Impurity Interstitials, Self-Interstitials, Silicon
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Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures
Authors: N.A. Sobolev, A.M. Emel'yanov, Yu.A. Nikolaev, K.F. Shtel'makh, Yu.A. Kudryavtsev, V.I. Sakharov, I.T. Serenkov, M.I. Makovijchuk, E.O. Parshin
Keywords: Defect, Erbium, Luminescence, Silicon
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Erbium Related Defects in Gallium Arsenide
Authors: A.R. Peaker, F. Coppinger, H. Efeoglu, J.H. Evans-Freeman, D.K. Maude, Jean Claude Portal, P. Rutter, K.E. Singer, A. Scholes, Adrian C. Wright
Keywords: Defect, DLTS, Erbium, Gallium Arsenide, Luminescence, Quantum Dots, Silicon
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Current Trends in Ion Implantation
Authors: Russell Gwilliam
Keywords: Defect, Ion Implantation, Process Control, Silicon
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Defect Studies in Semiconductors
Authors: Masanori Fujinami, Tsuguo Sawada, Takashi Akahane
Keywords: Anneal, Coincidence Doppler Broadening, Defect, Ion Implantation, Positron, Silicon, Vacancy, Vacancy Impurity Complexes
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Defect Study on Si Implanted with B and BF2 Ions by Coincidence Doppler Broadening Measurements
Authors: Takashi Akahane, Masanori Fujinami, Keisuke Ohnishi, Tsuguo Sawada
Keywords: Defect, Doppler Broadening, Ion Implantation, Silicon, Two-Detector Coincidence
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Defect Characterization in Multicrystalline Silicon Using Scanning Techniques
Authors: Sergei S. Ostapenko, I. Tarasov, Juris P. Kalejs
Keywords: Defect, Dislocation, Lifetime, Photoluminescence (PL), Silicon
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Secondary Electron Emission Induced by Deep Level Defects in GaAs
Authors: F. Iwase, Yoshikazu Hayashi
Keywords: Deep Level, Defect, Dopants, GaAs, Ion-Implantation, Secondary Electron Emission, Semiconductor, Silicon, Temperature Dependence, Vacancy
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