Papers by keyword «Silicon» and «Ion Implantation»
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Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation
Authors: S. Eichler, F. Börner, J. Gebauer, R. Krause-Rehberg
Keywords: Fluence Dependence, Ion Implantation, Silicon, Vacancy Type Defects
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Direct Evidence of Fluorine-Related Defects in F+, BF+ and BF2+ Implanted Silicon by Positron Annihilation
Authors: L. Liszkay, E. Kótai, Zs. Kajcsos, T. Laine
Keywords: Defect, Fluorine, Ion Implantation, Positron Beams, Semiconductors, Silicon, Vacancy
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Luminescence Centers in High-Energy Ion-Implanted Silicon
Authors: Koichi Terashima, Taeko Ikarashi, Masahito Watanabe, Tomohisa Kitano
Keywords: Cu Contamination, Ion Implantation, Photoluminescence (PL), Point Defects, Silicon
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Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C
Authors: Ulrich Wahl, J.G. Correia, G. Langouche, J.G. Marques, A. Vantomme, the ISOLDE Collaboration
Keywords: Er, Ion Implantation, Lattice Location, Rare Earth Doping, Silicon
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Current Trends in Ion Implantation
Authors: Russell Gwilliam
Keywords: Defect, Ion Implantation, Process Control, Silicon
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Defect Studies in Semiconductors
Authors: Masanori Fujinami, Tsuguo Sawada, Takashi Akahane
Keywords: Anneal, Coincidence Doppler Broadening, Defect, Ion Implantation, Positron, Silicon, Vacancy, Vacancy Impurity Complexes
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Defect Physics Investigations Using Positron and Ion Beams
Authors: P.J. Simpson, Stanislaw Szpala, A.P. Knights
Keywords: Electric Field, Garboldisham, Ion Implantation, Silicon, Vacancy
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Swift Heavy Ion Irradiation Effects in SiC Measured by Positrons
Authors: L. Liszkay, K. Havancsák, Marie France Barthe, P. Desgardin, L. Henry, Zs. Kajcsos, Gábor Battistig, E. Szilágyi, V.A. Skuratov
Keywords: Amorphization, Defect Profile, Ion Implantation, Irradiation, Semiconductor, SiC, Silicon, Swift Ions, TRIM
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Defect Study on Si Implanted with B and BF2 Ions by Coincidence Doppler Broadening Measurements
Authors: Takashi Akahane, Masanori Fujinami, Keisuke Ohnishi, Tsuguo Sawada
Keywords: Defect, Doppler Broadening, Ion Implantation, Silicon, Two-Detector Coincidence
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Depth-Selective 2D-ACAR with POSH: Application to Nanocavities Generated by Ion Implantation
Authors: C.V. Falub, S.W.H. Eijt, A. van Veen, P.E. Mijnarends, H. Schut
Keywords: 2D-ACAR, Ion Implantation, Nanocavities, Positronium, Silicon, Slow Position Beam
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