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Articles by author: A.A. Gippius

• 3D-4D-5D Transition and 4f Rare Earth Elements in III-V and II-VI Semiconductors as Luminescent Centres and Probes in Diagnostics of Implanted Layers
  Published in: Defects in Semiconductors I (p25)
• Band Structure Calculations and Magnetic Relaxation in Correlated Semiconductors FeSb₂ and RuSb₂
  Published in: Magnetism and Magnetic Materials (p287)
• Crossover from Valence Phase Transition to Kondo Behavior in Yb_1-xCe_xInCu₄ as Probed by Cu NQR
  Published in: Magnetism and Magnetic Materials (p419)
• Deep Levels due to 4d- and 5d-Transition Element Impurties in III-V Semiconductors
  Published in: Defects in Semiconductors 15 (p779)
• Defect Control and Defect Engineering in Ion-Implanted Diamond
  Published in: Defects in Semiconductors 18 (p85)
• Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond
  Published in: Defects in Semiconductors 14 (p1195)
• Impurity-Defect Reactions in Ion-Implanted Diamond
  Published in: Defects in Semiconductors 16 (p1219)
• Low Temperature Impurity Diffusion into Large-Band-Gap Semiconductors
  Published in: Diffusion in Materials DIMAT2000 (p679)
• Low Temperature Impurity Diffusion into Large-Band-Gap Semiconductors
  Published in: Defects in Semiconductors 19 (p1833)
• Titanium Impurity in Diamond
  Published in: Defects in Semiconductors 17 (p41)
• Yb Luminescence Centres in MBE-Grown and Ion-Implanted GaAs
  Published in: Defects in Semiconductors 19 (p917)