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Articles by author: A.P. Knights

• A Study of Epithermal Positron Emission from Metallic Surfaces
  Published in: Positron Annihilation - ICPA-10 (p161)
• An Electrostatic Beam System for Positron-Annihilation-Induced Auger Electron Spectroscopy
  Published in: Positron Annihilation - ICPA-10 (p189)
• Defect Physics Investigations Using Positron and Ion Beams
  Published in: Positron Annihilation - ICPA-12 (p56)
• Double Implanted Power MESFET Technology in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p707)
• Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor
  Published in: Silicon Carbide and Related Materials 2000 (p567)
• Low and Intermediate Energy Positron Backscattering
  Published in: Positron Annihilation - ICPA-10 (p177)
• Positron Implantation Studies of YBa₂Cu₃0_7-x
  Published in: Positron Annihilation - ICPA-10 (p133)
• Recent Advances in the Application of Slow Positron Beams to the Study of Ion Implantation Defects in Silicon
  Published in: Defects and Diffusion in Semiconductors (p41)
• Sensitivity of Positron Annihilation Spectroscopy to Energy Contamination in Low Energy Boron Ion Implantation
  Published in: Positron Annihilation - ICPA-13 (p123)
• The Role of Impurities in the Formation of Voids in Silicon
  Published in: Positron Annihilation - ICPA-13 (p180)