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Articles by author: A. Parisini

• Analysis of Σ=3 and Σ=9 Twin Boundaries in Three-Crystal Silicon Ingots
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p455)
• Carbon Nanotubes Grown by Catalytic CVD on Silicon Based Substrates for Electronics Applications
  Published in: THERMEC 2006 (p669)
• Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p665)
• Evolution of Monoclinic SiAs Precipitates in Heavily As⁺ Implanted and Isothermally Annealed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p393)
• Influence of the DX Center on the Transport Properties of Si-Doped Al_xGa_1-xAs
  Published in: Defect and Diffusion Forum Vols. 123-124 (p77)
• Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p1109)
• Optical and Morphological Properties of Stain-Etched Porous Silicon Films for Anti-Reflection Coatings of Photovoltaic Devices
  Published in: Light Emission from Silicon (p59)
• Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al_0.35Ga_0.65As
  Published in: Defects in Semiconductors 17 (p1129)
• Structural and Thermal Properties of High Porosity Freeze-Dried Porous Silicon
  Published in: Light Emission from Silicon (p101)
• Structural Characterization of Alloyed Al/Ti and Ti Contacts on SiC
  Published in: Silicon Carbide and Related Materials 2003 (p837)