Papers by Author: Alessia Le Donne

Abstract: The knowledge and control of the structural and morphological properties of nanocrystalline silicon is a fundamental requisite for its proper application in photovoltaics. To this purpose, nanocrystalline silicon films grown by Low Energy Plasma Enhanced Chemical Vapour Deposition (LEPECVD) technique on different kinds of substrates were submitted to a systematic characterization using Raman spectroscopy, X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The results showed that the nature of the film substrate induces deep changes in the structural properties of the deposited films. The importance of a Raman in–depth analysis for an accurate determination of the sample structure has been also demonstrated.

Abstract: High performance SiC detectors for ionising radiation have been designed, manufactured and tested. Schottky junctions on low-doped epitaxial 4H-SiC with leakage current densities of few pA/cm2 at room temperature has been realised at this purpose. The epitaxial layer has been characterised at different dose of radiations in order to investigate the SiC radiation hardness. The response of the detectors to alpha and beta particle and to soft X-ray have been measured. High energy resolution and full charge collection efficiency have been successfully demonstrated.