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Articles by author: Amador Pérez-Tomás

• 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility
  Published in: Silicon Carbide and Related Materials 2009 (p1207)
• 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N₂O
  Published in: Silicon Carbide and Related Materials 2004 (p673)
• 4H-SiC MOSFETs Using Thermal Oxidized Ta₂Si Films as High-k Gate Dielectric
  Published in: Silicon Carbide and Related Materials 2004 (p713)
• Characterisation of HfO₂/Si/SiC MOS Capacitors
  Published in: Silicon Carbide and Related Materials 2010 (p674)
• Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
  Published in: Silicon Carbide and Related Materials 2008 (p671)
• Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p697)
• Electrical Characterization of Deposited and Oxidized Ta₂Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures
  Published in: Silicon Carbide and Related Materials 2003 (p845)
• Germanium – Silicon Carbide Heterojunction Diodes – A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
  Published in: Silicon Carbide and Related Materials 2009 (p889)
• Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties
  Published in: Silicon Carbide and Related Materials 2008 (p443)
• Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta₂Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
  Published in: Silicon Carbide and Related Materials 2005 (p1059)
• Ohmic Contact Resistance to GaN Devices Dependence with on Temperature for GaN Devices T
  Published in: Silicon Carbide and Related Materials 2010 (p816)
• PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces
  Published in: Silicon Carbide and Related Materials 2005 (p1047)
• Physical Modelling of 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2011 (p993)
• SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps
  Published in: Silicon Carbide and Related Materials 2006 (p835)
• SiC on SOI Resonators: A Route for Electrically Driven MEMS in Harsh Environment
  Published in: Silicon Carbide and Related Materials 2009 (p845)