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Articles by author: Anant K. Agarwal

• 10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p1025)
• 1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs
  Published in: Silicon Carbide and Related Materials 2004 (p901)
• 12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p1187)
• 12 kV, 1 cm² SiC GTO Thyristors with Negative Bevel Termination
  Published in: Silicon Carbide and Related Materials 2011 (p1151)
• 1400 V 4H-SiC Power MOSFETs
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p989)
• 1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal
  Published in: Silicon Carbide and Related Materials - 2002 (p843)
• 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
  Published in: Silicon Carbide and Related Materials - 1999 (p1387)
• 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200ºC Baseplate Temperature
  Published in: Silicon Carbide and Related Materials 2005 (p1445)
• 4H-SiC Bipolar Junction Transistors with a Current Gain of 108
  Published in: Silicon Carbide and Related Materials 2007 (p1159)
• 4H-SiC DMOSFETs for High Speed Switching Applications
  Published in: Silicon Carbide and Related Materials 2004 (p797)
• 4H-SiC Gate Turn-Off (GTO) Thyristor Development
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1069)
• 4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics
  Published in: Silicon Carbide and Related Materials 2011 (p1105)
• 9 kV 4H-SiC IGBTs with 88 mΩ·cm² of R _{diff, on}
  Published in: Silicon Carbide and Related Materials 2006 (p771)
• 9 kV, 1 cm² SiC Gate Turn-Off Thyristors
  Published in: Silicon Carbide and Related Materials 2009 (p1017)
• A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of V_F, Current Saturation Capability and Fast Switching Speed
  Published in: Silicon Carbide and Related Materials 2009 (p1045)