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Articles by author: Andrej Yu. Kuznetsov

• Channeled Implants in 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p889)
• Channeling Measurements of Ion Implantation Damage in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p595)
• Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
  Published in: Silicon Carbide and Related Materials 2004 (p377)
• Damage Evolution in Al-implanted 4H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p869)
• Damage Reduction in Channeled Ion Implanted 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p893)
• Defect Behaviour in Deuterated and Non-Deuterated n-Type Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p553)
• Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si
  Published in: Diffusion in Materials DIMAT2000 (p597)
• Dopant Diffusion in Si_1-xGe_x Thin Films: Effect of Epitaxial Stress
  Published in: Diffusion in Solids - Past, Present and Future (p135)
• Doping of Silicon Carbide by Ion Implantation
  Published in: Silicon Carbide and Related Materials 2000 (p549)
• High Energy Resolution Detectors Based on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p1029)
• Ion Implantation Processing and Related Effects in SiC
  Published in: Silicon Carbide and Related Materials 2005 (p781)
• Optical Investigation of the Built-In Strain in 3C-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2003 (p657)
• Phosphorus Diffusion in Si_1-x Ge_x
  Published in: Diffusion in Materials DIMAT2000 (p709)
• Point Defect Formation in Si and Si:Ge; Computational Analysis of Pressure Effects
  Published in: Diffusion, Segregation and Stresses in Materials (p29)
• Radiation Induced Defect Levels in Highly Doped n-Type Si_1-xGe_x Strained Layers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p185)