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Articles by author: Andrew J. Trunek

• Absence of Dislocation Motion in 3C-SiC pn Diodes under Forward Bias
  Published in: Silicon Carbide and Related Materials 2006 (p223)
• Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
  Published in: Silicon Carbide and Related Materials - 2002 (p213)
• Comparative Growth Behavior of 3C-SiC Mesa Heterofilms with and without Extended Defects
  Published in: Silicon Carbide and Related Materials 2003 (p261)
• Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p1509)
• Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
  Published in: Silicon Carbide and Related Materials 2005 (p247)
• Gaseous Etching for Characterization of Structural Defects in Silicon Carbide Single Crystals
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p421)
• Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy
  Published in: Silicon Carbide and Related Materials 2001 (p311)
• HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces
  Published in: Silicon Carbide and Related Materials 2008 (p593)
• High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas
  Published in: Silicon Carbide and Related Materials 2003 (p1061)
• Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces
  Published in: Silicon Carbide and Related Materials 2001 (p251)
• Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers
  Published in: Silicon Carbide and Related Materials 2007 (p1199)
• Improved Mesa Designs for the Growth of Thin 4H-SiC Homoepitaxial Cantilevers
  Published in: Silicon Carbide and Related Materials 2006 (p117)
• Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p1335)
• Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC
  Published in: Silicon Carbide and Related Materials 2005 (p1483)
• Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
  Published in: Silicon Carbide and Related Materials 2005 (p279)