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Articles by author: Andrzej Misiuk

• "New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p181)
• A Study of the Conversion of the VO to the VO₂ Defect in Heat-Treated Silicon under Stress
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p249)
• Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p319)
• Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge⁺ Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p607)
• Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He
  Published in: High Pressure Technology of Nanomaterials (p285)
• Dislocation Related PL of Multi-Step Annealed Cz-Si Samples
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p773)
• Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p345)
• Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p313)
• Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p343)
• Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p393)
• Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p167)
• Evolution of Process - Induced Defects in Silicon under Hydrostatic Pressure
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p387)
• Formation of Shallow Donors in Stress-Annealed Silicon Implanted with High-Energy Ions
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p243)
• FTIR Study of Precipitation of Implanted Nitrogen in CZ-Si Annealed under High Hydrostatic Pressure
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p157)
• Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p565)