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Articles by author: Anton J. Bauer

• 3d-4d Transition Metal Complex Formation in Silicon
  Published in: Defects in Semiconductors 15 (p415)
• 4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
  Published in: Silicon Carbide and Related Materials 2010 (p734)
• Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing
  Published in: Silicon Carbide and Related Materials 2004 (p621)
• Barium, Strontium and Bismuth Contamination in CMOS Processes
  Published in: Ultra Clean Processing of Silicon Surfaces V (p9)
• Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications
  Published in: Silicon Carbide and Related Materials 2010 (p449)
• Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
  Published in: Silicon Carbide and Related Materials 2009 (p681)
• Detection and Electrical Characterization of Defects at the SiO₂/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials 2009 (p463)
• Effect of Increased Oxide Hole Trap Density due to Nitrogen Incorporation at the SiO₂/SiC Interface on F-N Current Degradation
  Published in: Silicon Carbide and Related Materials 2010 (p382)
• Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
  Published in: Silicon Carbide and Related Materials 2009 (p825)
• Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N₂O or NO
  Published in: Silicon Carbide and Related Materials 2008 (p521)
• Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements
  Published in: Silicon Carbide and Related Materials 2005 (p827)
• High Temperature Implantation of Aluminum in 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2006 (p587)
• High-K: Latest Developments and Perspectives
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p165)
• Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC
  Published in: Silicon Carbide and Related Materials 2010 (p417)
• Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face
  Published in: Silicon Carbide and Related Materials 2007 (p597)