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Articles by author: Antonino La Magna

• Advanced Stress Analysis by Micro-Structures Realization on High Quality Hetero-Epitaxial 3C-SiC for MEMS Application
  Published in: Silicon Carbide and Related Materials 2010 (p133)
• Atomistic and Continuum Simulations of the Homo-Epitaxial Growth of SiC
  Published in: Silicon Carbide and Related Materials 2008 (p73)
• Complete Determination of the Local Stress Field in Epitaxial Thin Films Using Single Microstructure
  Published in: Silicon Carbide and Related Materials 2010 (p213)
• Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates
  Published in: HeteroSiC & WASMPE 2011 (p31)
• Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study
  Published in: Silicon Carbide and Related Materials 2010 (p48)
• Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications
  Published in: Silicon Carbide and Related Materials 2011 (p517)
• Extended Study of the Step-Bunching Mechanism during the Homoepitaxial Growth of SiC
  Published in: Silicon Carbide and Related Materials 2008 (p117)
• From Point to Extended Defects in Silicon: A Theoretical Study
  Published in: Defect Interaction and Clustering in Semiconductors (p177)
• Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
  Published in: Silicon Carbide and Related Materials - 2002 (p819)
• Micro-Raman Analysis of a Micromachined 3C-SiC Cantilever
  Published in: Silicon Carbide and Related Materials 2011 (p525)
• On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2010 (p358)
• Raman Stress Characterization of Hetero-Epitaxial 3C-SiC Free Standing Structures
  Published in: Silicon Carbide and Related Materials 2010 (p141)
• Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
  Published in: Silicon Carbide and Related Materials 2010 (p221)
• Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers
  Published in: Silicon Carbide and Related Materials 2009 (p865)
• Self-Interstitial Kinetics and Transient Phenomena in Si Crystals
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p171)