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Articles by author: Arne Nylandsted-Larsen

• Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon
  Published in: Defects in Semiconductors 14 (p1135)
• Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors
  Published in: Defects in Semiconductors 15 (p1137)
• Boron Diffusion in Strained and Relaxed Si_1-xGe_x
  Published in: Diffusion in Materials DIMAT2000 (p703)
• Defect Impurity Complex Formation at High Donor Concentration in Silicon
  Published in: Defects in Semiconductors 16 (p273)
• Defects in SiGe
  Published in: Defects in Semiconductors 19 (p83)
• Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si
  Published in: Diffusion in Materials DIMAT2000 (p597)
• Diffusion of Sb in Si_1-xGe_x-Alloy Layers
  Published in: Diffusion in Materials DIMAT 1996 (p1125)
• Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments
  Published in: Defects in Semiconductors 18 (p1117)
• Rapid Thermal Annealing of Ion Implanted Strained Si_1-xGe_x
  Published in: Defects in Semiconductors 17 (p513)
• The Effect on the Schottky Barrier Height of Diffusion of Pt into Si From PtSi
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p355)