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Articles by author: Bengt G. Svensson

• A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation
  Published in: Silicon Carbide and Related Materials 2009 (p431)
• A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon
  Published in: Defects in Semiconductors 16 (p333)
• Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer
  Published in: Silicon Carbide and Related Materials 2008 (p533)
• Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon
  Published in: Defects in Semiconductors 17 (p1239)
• Annealing of Irradiated Highly Phosphorous-Doped Czochralski Silicon
  Published in: Defects in Semiconductors 14 (p1087)
• Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p917)
• Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p735)
• Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p365)
• Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p57)
• Carrier Removal in Electron Irradiated 4H and 6H SiC
  Published in: Silicon Carbide and Related Materials 2007 (p425)
• Channeled Implants in 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p889)
• Channeling Measurements of Ion Implantation Damage in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p595)
• Characterization of the SiO₂/SiC Interface with Impedance Spectroscopy
  Published in: Silicon Carbide and Related Materials 2008 (p501)
• Damage Evolution in Al-implanted 4H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p869)
• Defect Behaviour in Deuterated and Non-Deuterated n-Type Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p553)