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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Byoung Chul Shin
19 papers on 2 pages:
1
[2]
[next]
An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
Published in:
Silicon Carbide and Related Materials 2006
(p9)
Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)
Published in:
Silicon Carbide and Related Materials 2007
(p831)
Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method
Published in:
Silicon Carbide and Related Materials 2010
(p44)
Epitaxial Growth of 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD Using Hexamethyledisilane[(CH
3
)
6
Si
2
]
Published in:
Silicon Carbide and Related Materials 2010
(p107)
Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace
Published in:
Silicon Carbide and Related Materials 2005
(p267)
Epitaxial Growth of 4H-SiŠ” Using Si
2
(CH
3
)
6
+Si
2
Cl
6
+C
3
H
8
+H
2
System by Atmospheric Pressure Hot CVD Method
Published in:
Silicon Carbide and Related Materials 2011
(p97)
Gallium and Nitrogen Co-Doped ZnO Thin Films by Pulsed Laser Deposition
Published in:
High-Performance Ceramics V
(p322)
GaN Epitaxial Growth on Sapphire Substrate with Al Buffer Layer Prepared by E-Beam Evaporation
Published in:
Silicon Carbide and Related Materials 2008
(p935)
High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design
Published in:
Silicon Carbide and Related Materials 2005
(p83)
Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
Published in:
Silicon Carbide and Related Materials 2006
(p25)
Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method
Published in:
Silicon Carbide and Related Materials 2008
(p7)
Non-Polar SiC Crystal Growth with
m
-Plane(1-100) and
a
-Plane(11-20) by PVT Method
Published in:
Silicon Carbide and Related Materials 2009
(p37)
Photoluminescent Europium Complexes with Oxygen and/or Nitrogen Donating Ligands
Published in:
On the Convergence of Bio-, Information-, Enrivonmental-, Energy-, Space- and Nano-Technolgies
(p966)
Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film
Published in:
High-Performance Ceramics V
(p308)
SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
Published in:
Silicon Carbide and Related Materials 2004
(p47)
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