Papers by Author: Cestmir Drasar

Abstract: The FGM principle plays an important role in enhancing the efficiency of thermoelectric devices. While a thermoelectric generator (TEG) is typically operating in a large temperature difference, attractive conversion efficiency of a particular semiconductor is restricted to a small temperature range. Hence, when employing a semiconductor with its highest possible efficiency at the respective temperature in the internal temperature field along a stacked TEG, the overall conversion efficiency of the device may be considerably enhanced. Similarly, the FGM principle can be employed for linearization of thermal sensors. The output voltage (response) of the sensor is proportional to the Seebeck coefficient of the material the sensor is made of. Since the Seebeck coefficient is strongly temperature-dependent, the sensor response is not linear with temperature. However, combining in a stack two or more semiconductors which temperature dependence of the Seebeck coefficient are complementary to each other, results in a sensor with linear response (i.e. its output is proportional to the temperature difference, or heat flux, respectively.) Stacking of several materials to each other or grading a semiconducting sample requires a technique which can scan the Seebeck coefficient profiles S(x) along the stack. Accordingly a Seebeck micro-probe technique has been developed for scanning the surface of a sample monitoring S with a resolution of down to 10 µm within the temperature range from -15°C to 60°C. An additional option of such a device is the scanning of the electrical potential along the stack under current flow [1]. Thus, related experimental data on the local profiles of the electrical conductivity and Seebeck coefficient along the stack (or continuously graded FGM) will be available. The apparatus has been automated so that extended areas may be scanned providing two-dimensional images. Additionally, several samples can be scanned in one automatic run.

Abstract: Recently, there is a strong interest in developing superior thermoelectric materials with the aim to improve the performance of a thermoelectric device. However, the performance of a thermoelectric generator (TEG) can be considerably improved also by applying a graded composition along the temperature gradient inside the thermoelectric device so that at each position the respective material achieves its maximum thermoelectric performance (TE FGM principle). Combining the high efficiency of Bi2Te3 (used at low temperatures) and general durability of FeSi2 (applied up to high temperatures) will result in a thermoelectric device with enhanced efficiency operating in air at a wide temperature range. The challenge is to contact these dissimilar materials without any negative impact on the performance of TEG. Besides providing a good electrical and thermal contact between Bi2Te3 and FeSi2 the junctions have to remain mechanically and chemically stable over long term. A Bi2Te3-SiO2 composite interlayer was used to adjust the different coefficient of thermal expansion (CTE) of FeSi2 (≈ 7·10-6 K-1) and Bi2Te3 (≈ 19·10-6 K-1). Due to low chemical stability of the Bi2Te3/FeSi2 contact at elevated temperatures (1000 h @ 300°C) a contacting material (diffusion barrier) based on Ni, Zn, Ti, and ZnTe was tested. Some contacts show excellent chemical and mechanical stability, though the electrical properties of the contacts do not meet the requirements (e.g. ZnTe is a wide gap semiconductor with high electrical resistivity). According to very recent studies at the Zn-based diffusion barriers a very thin layer of undoped ZnTe growing at the Bi2Te3/Zn interface causes the deterioration of the contact resistance. Ideas solving this problem are outlined and discussed.