Papers by Author: Chao Chen

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Abstract: With the development and accelerating of economy and social civilization, in the interior decorating and design, the pursuit of personal and environmental friendly trend has gradually emerged, but the traditional building materials and design materials often have safety problems of different degree. The green environmental protection materials can also meet the two requirements mentioned above. This paper mainly analyzes the causes and characteristics of interior decoration design using environmentally friendly materials, understands several kinds of environmentally friendly materials available in interior decoration design, and analyses specific direction for practical application.
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Abstract: With the increasing demand of the daily environment, new nanomaterials are more widely used in interior design. At the same time, with the development of interior design, new nanomaterials have been widely used in the late soft decoration. In the hard and soft outfit, application of new materials often becomes the punch-line. However, in either the early hard decoration or the late soft decoration, the whole design development trend, ecological design, low carbon life began to penetrate into the interior design. All these put forward higher professional requirements for the designers at present and in the future.
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Abstract: (1-x)(Na0.5Bi0.5)TiO3-xBaTiO3 (abbreviated as NBBT100(1-x)/100x or NBBT100x) solid solution single crystals with x=0, 0.06, 0.08, 0.10, 0.20, 1.0 were grown using top-seeded solution growth (TSSG) method. Dielectric, piezoelectric and ferroelectric properties of NBBT crystals were investigated as a function of temperature, frequency, composition and crystal orientation. The temperature (Tm) corresponding to dielectric maximum and the depolarization temperature (Td) decrease with increasing x. The <001> oriented NBBT90/10 single crystal shows excellent piezoelectric performance with piezoelectric constant (d33) value about 275pC/N and exhibits relatively smaller coercive field (Ec) of 2.49 kV/mm and dielectric loss tanδ of 2.9 %, indicating a more adaptive engineered domain structure.
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