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Articles by author: Charalamos A. Londos

• "New Donors" in Czochralski Grown Silicon Annealed at T≥ 600°C under Compressive Stress
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p181)
• A Search on the Identity of the Ev+0.34 eV C-Related Defect in p-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p247)
• A Study of the Conversion of the VO to the VO₂ Defect in Heat-Treated Silicon under Stress
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p249)
• An IR Study of the Annealing Behaviour of A-Center in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p245)
• Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p129)
• DLTS Investigations of the Carbon-Related Centers in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p443)
• Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p161)
• Identification of the Carbon Associated Radiation Damage Levels in Silicon
  Published in: Defects in Semiconductors 14 (p947)
• Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p259)
• Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p169)
• Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p59)
• IR Studies of Oxygen-Yacancy Related Defects in Irradiated Silicon
  Published in: Defects and Diffusion in Semiconductors (p1)
• IR Studies on the Interaction between Thermal and Radiation Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p351)
• IR Studies on VO_N, C_IO_I and C_IC_S Defects in Ge-Doped Cz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p147)
• New Infrared Bands in Neutron-Irradiated Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p281)