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Articles by author: Christian Hecht

• 1700 V SiC Schottky Diodes Scaled to 25 A
  Published in: Silicon Carbide and Related Materials 2000 (p675)
• Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p95)
• Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology
  Published in: Silicon Carbide and Related Materials 2003 (p981)
• Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
  Published in: Silicon Carbide and Related Materials 2005 (p135)
• Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2006 (p89)
• Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p141)
• High Voltage SiC Vertical JFET for High Power RF Applications
  Published in: Silicon Carbide and Related Materials 2011 (p1037)
• High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
  Published in: Silicon Carbide and Related Materials 2009 (p89)
• Large-Area Homoepitaxial Growth of Low-Doped Thick Epilayers for Power Devices with V_BR > 4 kV
  Published in: Silicon Carbide and Related Materials 2008 (p77)
• Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories
  Published in: Silicon Carbide and Related Materials - 1999 (p1243)
• Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV
  Published in: Silicon Carbide and Related Materials 2005 (p239)