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Articles by author: D. Stiévenard

• A Model for the Atomic Configuration of the EL2 Defect in GaAs
  Published in: Defects in Semiconductors 14 (p305)
• Accurate Determination of Capture Time Constant of Interface States in MOS Structures
  Published in: Defects in Semiconductors 14 (p499)
• Characterization of Electron Traps in GaAs-GaAlAs Superlattices
  Published in: Defects in Semiconductors 14 (p199)
• Defects in Heterostructures and Superlattices
  Published in: Defects in Semiconductors 15 (p679)
• Detection of Defects Responsible for Lifetime in p-Type Si
  Published in: Defects in Semiconductors 17 (p189)
• Electrical Characterization of Surface Defects on Porous p-Type Silicon
  Published in: Defects in Semiconductors 17 (p1475)
• Electron Paramagnetic Resonance Studies of Intrinsic Defects in Electron-Irradiated GaAs
  Published in: Defect and Diffusion Forum Vols. 117-118 (p1)
• Energy Levels Associated with the Metastable State of EL2
  Published in: Defects in Semiconductors 16 (p911)
• Evidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band Offset
  Published in: Defects in Semiconductors 17 (p587)
• Influence of Electron Irradiation Induced Defects on the Current-Voltage Characteristics of a Resonant Tunneling Diode
  Published in: Defects in Semiconductors 17 (p1553)
• Intrinsic Defects in Electron Irradiated p-Type GaAs
  Published in: Defects in Semiconductors 16 (p965)
• Irradiation Induced Defects in Semiconductors
  Published in: Materials under Irradiation (p229)
• Metastable to Stable EL2 Regeneration via an 'Auger' Mechanism Induced by the Debye Tail
  Published in: Defects in Semiconductors 15 (p85)
• On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs
  Published in: Defects in Semiconductors 14 (p463)
• Re-Examination of the Configuration Coordinate Diagram of EL2
  Published in: Defects in Semiconductors 16 (p917)