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Articles by author: Danilo Crippa

• Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2004 (p429)
• Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
  Published in: Silicon Carbide and Related Materials 2005 (p163)
• Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
  Published in: Silicon Carbide and Related Materials 2006 (p93)
• New Achievements on CVD Based Methods for SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p67)
• On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2010 (p358)
• Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
  Published in: Silicon Carbide and Related Materials 2005 (p199)
• SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
  Published in: Silicon Carbide and Related Materials 2007 (p123)
• SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
  Published in: Silicon Carbide and Related Materials 2005 (p179)
• Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films
  Published in: Silicon Carbide and Related Materials 2011 (p149)
• Thick Epitaxial Layers Growth by Chlorine Addition
  Published in: Silicon Carbide and Related Materials 2008 (p55)
• Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
  Published in: Silicon Carbide and Related Materials 2007 (p127)
• Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors
  Published in: Silicon Carbide and Related Materials 2008 (p845)
• Very High Growth Rate Epitaxy Processes with Chlorine Addition
  Published in: Silicon Carbide and Related Materials 2006 (p157)