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Articles by author: Didier Chaussende

• 3C-SiC Pseudosubstrates for the Growth of Cubic GaN
  Published in: Silicon Carbide and Related Materials - 1999 (p1467)
• A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
  Published in: Silicon Carbide and Related Materials - 2002 (p87)
• Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p85)
• Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
  Published in: Silicon Carbide and Related Materials 2001 (p729)
• Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
  Published in: Silicon Carbide and Related Materials 2005 (p99)
• Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2003 (p91)
• Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy
  Published in: Silicon Carbide and Related Materials 2007 (p71)
• Comparison between Various Chemical Systems for the CVD Step in the CF-PVT Crystal Growth Method
  Published in: Silicon Carbide and Related Materials 2003 (p135)
• Dislocation-Induced Birefringence in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2008 (p271)
• Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p287)
• Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
  Published in: Silicon Carbide and Related Materials 2008 (p193)
• Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
  Published in: Silicon Carbide and Related Materials 2003 (p387)
• Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
  Published in: Silicon Carbide and Related Materials 2009 (p163)
• Gas Fed Top-Seeded Solution Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p111)
• Growth Mode and Kinetics of Atmospheric Pressure Chemical Vapour Deposition of β-SiC on Si(100) Substrate
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p227)