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Articles by author: Didier Chaussende

• Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111)
  Published in: Silicon Carbide and Related Materials 2011 (p617)
• Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis
  Published in: Silicon Carbide and Related Materials 2006 (p199)
• Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
  Published in: Silicon Carbide and Related Materials 2008 (p45)
• Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase
  Published in: Silicon Carbide and Related Materials 2008 (p31)
• On the Stability of 3C-SiC Single Crystals at High Temperatures
  Published in: Silicon Carbide and Related Materials 2011 (p493)
• Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique
  Published in: Silicon Carbide and Related Materials 2010 (p169)
• Optical Investigation of Electronic Properties in Bulk and Surface Region of Sublimation-Grown 3C-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2008 (p303)
• Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes
  Published in: Silicon Carbide and Related Materials 2004 (p3)
• Quality Investigation of 3C-SiC Crystals Grown by CF-PVT Technique
  Published in: Silicon Carbide and Related Materials 2010 (p20)
• Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
  Published in: Silicon Carbide and Related Materials 2007 (p83)
• Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
  Published in: Silicon Carbide and Related Materials 2005 (p287)
• Structural Characterization of CF-PVT Grown Bulk 3C-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p67)
• Study of the Spontaneous Nucleation of 3C-SiC Single Crystals Using CF-PVT Technique
  Published in: Silicon Carbide and Related Materials 2009 (p55)
• TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
  Published in: Silicon Carbide and Related Materials 2009 (p383)
• Top Seeded Solution Growth of 3C-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2008 (p41)