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Articles by author: Donat J. As

• An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1173)
• Cathodoluminescence of Cubic GaN Epilayers
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1339)
• Comparative Study of 3C-GaN Grown on Semi-Insulating 3C-SiC/Si(100) Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p943)
• Enhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-Doping
  Published in: Silicon Carbide and Related Materials - 1999 (p1591)
• Mechanical Properties of Cubic SiC, GaN and AlN Thin Films
  Published in: Silicon Carbide and Related Materials 2011 (p513)
• Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p1489)
• n- and p-Type Doping of Cubic GaN
  Published in: Defects and Diffusion in Ceramics (p87)
• Resonant Raman Scattering and the Emission Process in Zincblende-In_xGa_1-xN
  Published in: Silicon Carbide and Related Materials - 1999 (p1595)