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Articles by author: E.N. Mokhov

• Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition
  Published in: Silicon Carbide and Related Materials 2004 (p507)
• SiC Polytype Transformation on the Growth Surface
  Published in: Silicon Carbide and Related Materials 2000 (p147)
• Structural Transformation of Dislocated Micropipes in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p367)
• The Electronic Structure of the Be Acceptor Centers in 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p805)
• The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p525)
• The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction
  Published in: Silicon Carbide and Related Materials 2001 (p501)
• The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p799)
• X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p595)
• Zeeman Spectroscopy of Transition Metals in Hexagonal GaN
  Published in: Defects in Semiconductors 18 (p719)