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Articles by author: Edward K. Sanchez

• Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
  Published in: Silicon Carbide and Related Materials 2009 (p291)
• Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
  Published in: Silicon Carbide and Related Materials 2010 (p269)
• Micropipe Dissociation through Thick n⁺ Buffer Layer Growth
  Published in: Silicon Carbide and Related Materials 2007 (p167)
• Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p469)
• Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy
  Published in: Silicon Carbide and Related Materials 2009 (p295)
• Resistivity Distribution in Undoped 6H-SiC Boules and Wafers
  Published in: Silicon Carbide and Related Materials 2005 (p51)
• Sense Determination of c-Axis Screw Dislocations in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p297)
• The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
  Published in: Silicon Carbide and Related Materials 2008 (p109)