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Articles by author: Erik Janzén

• 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
  Published in: Silicon Carbide and Related Materials 2006 (p53)
• 4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues
  Published in: Silicon Carbide and Related Materials 2003 (p985)
• A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p535)
• A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p737)
• A Coupled Finite Element Model for the Sublimation Growth of SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p65)
• A Deep Photoluminescence Band in 4H SiC Related to the Silicon Vacancy
  Published in: Defects in Semiconductors 19 (p685)
• A Metastable Selenium-Related Center in Silicon
  Published in: Defects in Semiconductors 17 (p159)
• A Theoretical Study on Aluminium-Related Defects in SiC
  Published in: Silicon Carbide and Related Materials 2006 (p445)
• Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
  Published in: Silicon Carbide and Related Materials 2001 (p203)
• Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p473)
• Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p443)
• As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p365)
• Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
  Published in: Silicon Carbide and Related Materials - 1999 (p559)
• Behavior of Micropipes during Growth in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p395)
• Bound Exciton Recombination in Electron Irradiated 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p477)