HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Erik Janzén

• Calculation of Hyperfine Constants of Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p511)
• Carrier Removal in Electron Irradiated 4H and 6H SiC
  Published in: Silicon Carbide and Related Materials 2007 (p425)
• Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions
  Published in: Silicon Carbide and Related Materials 2011 (p109)
• Cathodoluminescence of Defect Regions in SiC Epi-Films
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p653)
• Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p489)
• Characterisation and Defects in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p9)
• Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques
  Published in: Silicon Carbide and Related Materials 2001 (p259)
• Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials - 2002 (p709)
• Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces
  Published in: Silicon Carbide and Related Materials - 1999 (p375)
• Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p593)
• Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2010 (p75)
• Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers
  Published in: Silicon Carbide and Related Materials 2009 (p107)
• Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
  Published in: Silicon Carbide and Related Materials 2010 (p59)
• Chloride-Based SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2008 (p89)
• Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p603)