HOME
CONTACT
My eBook
Username:
Password:
FULLTEXT SEARCH
NEW:
Advanced Search
MSF
>
Materials Science Forum
KEM
>
Key Engineering Materials
SSP
>
Solid State Phenomena
DDF
>
Defect and Diffusion Forum
AMM
>
Applied Mechanics and Materials
AMR
>
Advanced Materials Research
AST
>
Advances in Science and Technology
JNanoR
>
Journal of Nano Research
JBBTE
>
Journal of Biomimetics, Biomaterials, and Tissue Engineering
JMNM
>
Journal of Metastable and Nanocrystalline Materials
JERA
>
International Journal of Engineering Research in Africa
AEF
>
Advanced Engineering Forum
NH
>
Nano Hybrids
> @scientific.net
CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Erik Janzén
198 papers on 14 pages:
[prev]
[1]
[2]
3
[4]
[5]
...
[14]
[next]
Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
Published in:
Silicon Carbide and Related Materials 2005
(p575)
Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
Published in:
Silicon Carbide and Related Materials 2009
(p95)
Considerations on the Crystal Morphology in the Sublimation Growth of SiC
Published in:
Silicon Carbide and Related Materials - 1999
(p95)
Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
Published in:
Silicon Carbide and Related Materials 2007
(p405)
Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation
Published in:
Silicon Carbide and Related Materials 2011
(p605)
Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
Published in:
Silicon Carbide and Related Materials - 2002
(p423)
CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
Published in:
Silicon Carbide, III-Nitrides and Related Materials
(p123)
CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates
Published in:
Silicon Carbide and Related Materials 2011
(p189)
D
ll
PL Intensity Dependence on Dose, Implantation Temperature and Implanted Species in 4H- and 6H-SiC
Published in:
Silicon Carbide and Related Materials - 2002
(p345)
Deep Acceptor Levels of the Carbon Vacancy-Carbon Antisite Pairs in 4H-SiC
Published in:
Silicon Carbide and Related Materials 2006
(p449)
Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
Published in:
Silicon Carbide and Related Materials 2007
(p401)
Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
Published in:
Silicon Carbide and Related Materials 2008
(p373)
Defects in High-Purity Semi-Insulating SiC
Published in:
Silicon Carbide and Related Materials 2003
(p437)
Defects in Semi-Insulating SiC Substrates
Published in:
Silicon Carbide and Related Materials - 2002
(p45)
Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
Published in:
Silicon Carbide and Related Materials 2008
(p377)
Username:
Password: