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Papers by Author: Erwan Morvan

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Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy

Authors: Jean Marie Bluet, M. Gassoumi, I. Dermoul, F. Chekir, H. Maaref, Gérard Guillot, Erwan Morvan, Christian Dua, Christian Brylinski

Abstract: Conductance DLTS measurements have been performed on 4H-SiC MESFETs. A broad band due to electron emission by different levels is observed. An additional “hole-like” level with activation energy of 0.9 eV is obtained in linear regime but not in saturation regime. From the results, it is proposed that this “hole-like” signal is due to capture of electron present at a conductive SiC/SiO2 interfacial layer.

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Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

Authors: M. Gassoumi, N. Sghaier, I. Dermoul, F. Chekir, H. Maaref, Jean Marie Bluet, Gérard Guillot, Erwan Morvan, Olivier Noblanc, Christian Dua, Christian Brylinski

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Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs

Authors: Alexandre Kerlain, Erwan Morvan, Christian Dua, N. Caillas, Christian Brylinski

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Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals

Authors: Servane Blanqué, R. Pérez, Philippe Godignon, Narcis Mestres, Erwan Morvan, Alexandre Kerlain, Christian Dua, Christian Brylinski, Marcin Zielinski, Jean Camassel

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Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics

Authors: Erwan Morvan, Alexandre Kerlain, Christian Dua, Christian Brylinski

731

Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs

Authors: N. Sghaier, Jean Marie Bluet, A. Souifi, Gérard Guillot, Erwan Morvan, Christian Brylinski

1363

SiC Microwave Power Devices

Authors: Erwan Morvan, Olivier Noblanc, Christian Dua, Christian Brylinski

669

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Authors: Mihai Lazar, Laurent Ottaviani, Marie Laure Locatelli, Christophe Raynaud, Dominique Planson, Erwan Morvan, Philippe Godignon, Wolfgang Skorupa, Jean-Pierre Chante

571

Doping of Silicon Carbide by Ion Implantation

Authors: Bengt Gunnar Svensson, Anders Hallén, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Martin S. Janson, Boleslaw Formanek, John Österman, P.O.Å. Persson, L. Hultman, L. Storasta, F.H.C. Carlsson, Peder Bergman, C. Jagadish, Erwan Morvan

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Confocal Raman Microprobe of Lattice Damage in N⁺ Implanted 6H-SiC

Authors: Narcis Mestres, F. Alsina, F.J. Campos, Jordi Pascual, Erwan Morvan, Philippe Godignon, José Millan

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