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Articles by author: Evgenia V. Kalinina

• 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density
  Published in: Silicon Carbide and Related Materials - 1999 (p505)
• 4H-SiC High Temperature Spectrometers
  Published in: Silicon Carbide and Related Materials 2006 (p941)
• 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 ºC
  Published in: Silicon Carbide and Related Materials 2008 (p849)
• Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
  Published in: Silicon Carbide and Related Materials 2004 (p377)
• Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
  Published in: Silicon Carbide and Related Materials - 2002 (p467)
• Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method
  Published in: Silicon Carbide and Related Materials 2001 (p1313)
• Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2003 (p705)
• Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p401)
• Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
  Published in: Silicon Carbide and Related Materials 2008 (p473)
• Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
  Published in: Silicon Carbide and Related Materials - 2002 (p637)
• High Energy Resolution Detectors Based on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p1029)
• Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN
  Published in: Defects in Semiconductors 19 (p1143)
• Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
  Published in: Silicon Carbide and Related Materials 2004 (p993)
• Investigation of 4H-SiC Layers Implanted by Al Ions
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p53)
• Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
  Published in: Silicon Carbide and Related Materials 2001 (p835)