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Articles by author: F. Gourbilleau

• Analysis of SiC-SiO₂ Interfaces by TEM
  Published in: Intergranular and Interphase Boundaries in Materials (p599)
• Cubic Silicon Carbide Films Grown by Reactive Magnetron Sputtering at Relatively Low Temperature
  Published in: Polycrystalline Semiconductors V (p477)
• Interfaces in SiC/C CVD Multilayers
  Published in: Intergranular and Interphase Boundaries in Materials (p237)
• Optical, Electrical and Structural Studies of Microcrystallized Sputtered Silicon
  Published in: Polycrystalline Semiconductors IV (p243)
• Photoluminescence Features of Si/SiO₂ Superlattices Produced by Reactive Magnetron Sputtering
  Published in: Polycrystalline Semiconductors VI (p249)
• Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C
  Published in: Polycrystalline Semiconductors VI (p65)
• Structure Dependence of the Electrical Conductivity of Hydrogenated Nanocrystalline Silicon Films
  Published in: Polycrystalline Semiconductors V (p143)
• The Thermal Spike Model: A Possible Way to Describe the Effects Induced in Y₂O₃ by Swift Heavy Ion Irradiations
  Published in: Materials Science Applications of Ion Beam Techniques (p21)
• Thickness Control of the Amorphous Buffer Layer of Hydrogenated Nanocrystalline Silicon: Effect of the Dopant Concentration
  Published in: Polycrystalline Semiconductors V (p137)